Research partnership leads to world's first Compound Semiconductor Cluster
Our research and our partnership with a compound semiconductor facility has led to the world’s first Compound Semiconductor Cluster and investment of over £167 million.

Compound semiconductors underpin the next generation of opto-electronic devices, but the UK has lacked an end-to-end compound semiconductor industry. For some years researchers in the School of Physics and Astronomy have been engaged in developing methods for the improved design, production and characterisation of compound semiconductors. This has resulted in more efficient manufacturing processes and quality control. As a result, a research partnership developed between compound semiconductor manufacturer, IQE, and researchers at Cardiff. This strategic partnership and IQE’s decision to expand its manufacturing base, and to maintain its headquarters in Wales, resulted in the foundation of the world’s first Compound Semiconductor Cluster which has led to investment of over £167 million.

Impact
Our research has laid the foundation for the establishment in South Wales of a major technological cluster for the design, development and commercialisation of compound semiconductors. An initial partnership between the School of Physics and Astronomy and IQE encouraged the company to maintain their manufacturing base in South Wales and further develop their presence in the region. As a result of this collaboration we have:
- established a joint-venture company with £12M private investment and created 70 jobs;
- attracted external investment and jobs to the cluster, including locating the UK’s Compound Semiconductor Catapult and attracting private businesses to the region; and
- enabled the foundation of the Newport Mega Foundry, directly creating 90 new jobs and safeguarding 545 jobs by preserving a UK manufacturing base.
Our research partnership with IQE has led to the development of the world’s first Compound Semiconductor Cluster which has attracted over £167 million in investment. New companies have been established in South Wales and a new UK manufacturing base now supports over 1,687 jobs.
Publications
Matthews, D. R., et al., Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers, Applied Physics Letters 81(26), 4904, 2002. https://doi.org/10.1063/1.1532549
Sandall, I. C. et al., Temperature dependence of threshold current in p-doped quantum dot lasers, Applied Physics Letters 89(15), 15111801, 2006. https://doi.org/10.1063/1.2361167
Pope, I., et al., Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm, Applied Physics Letters 82(17), 2755, 2003. https://doi.org/10.1063/1.1570515
Edwards, G. T., et al., Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology, 22(9), 1010, 2007. https://doi.org/10.1088/0268-1242/22/9/006
Blood, P., et al., Characterization of semiconductor laser gain media by the segmented contact method, IEEE Journal of Selected Topics in Quantum Electronics 9(5) 1275, 2003. 10.1109/JSTQE.2003.819472
Langbein, W., et al. Heterodyne spectral interferometry for multidimensional nonlinear spectroscopy of individual quantum systems, Optics Letters, 31(8), 1151, 2006. https://doi.org/10.1364/OL.31.001151