Dr Khalifa M Azizur-Rahman
Postdoctoral Research Associate, Research
Advanced Materials and Devices - Sêr Cymru Research Group
- azizur-rahman@cardiff.ac.uk
- +44 (0)29 2251 0181
- Room N/3.13, Queen's Buildings - North Building, 5 The Parade, Newport Road, Cardiff, CF24 3AA
Overview
Motivation:
High efficiency detection of single photons at telecommunication wavelengths (notably at 1.55 µm) is critical for emerging technologies, such as free-space and on-fiber quantum information processing, eye-safe and long-distance light detection and ranging (LiDAR), and highly sensitive remote sensing. This research project aimed to meet this critical need by developing III-V nanopillar-based uncooled single-photon avalanche diodes (NP-SPADs).
Biography
1.T-Y Chang, H Kim, W A Hubbard, K M Azizur-Rahman, J J Ju, J-H Kim, W-J Lee, D L Huffaker, “InAsP Quantum Dot-Embedded InP Nanowire toward Silicon Photonic Application,” ACS Appl. Mater. Interfaces, 2022. [Supplementary Cover article]
2.Y Ji, K M Azizur-Rahman, T Chang, B-C Juang, D L Prout, B Liang, D L Huffaker, A F Chatziioannou, “Optimization of surface passivation for suppressing leakage current in GaSb PIN devices,” Electronics Letters, 56 (25), 2020.
3.D Ren, K M Azizur-Rahman, Z Rong, B-C Juang, S Somasundaram, A C Farrell, B S Williams, and D L Huffaker, “Developing uncooled InAsSb nanowire photodetector arrays with Al2O3 passivation for photodetection at mid-wavelength infrared,” Nano Lett., 19 (5), 2019. [Supplementary Cover article]
4.A C Farrell, X Meng, D Ren, H Kim, P Senanayake, N Y Hseih, Z Rong, T-Y Chang, K M Azizur-Rahman, and D L Huffaker, “InGaAs-GaAs nanowire avalanche photodiodes toward single photon detection in free-running mode,” Nano Lett., 19 (1), 2018.
5.D Ren, Z Rong, K M Azizur-Rahman, S Somasundaram, and D L Huffaker, “Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire photodetectors with p-n heterojunctions,” Nanotechnology, 30 (4), 2018.
6.D Ren, X Meng, Z Rong, M Cao, A C Farrell, S Somasundaram, K M Azizur-Rahman, B S Williams, and D L Huffaker, “Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions,” Nano Lett., 18 (12), 2018.
7.D Ren, Z Rong, S Somasundaram, K M Azizur-Rahman, B Liang, and D L Huffaker, “A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires,” Nanotechnology, 29 (50), 2018.
8.M Robson, K M Azizur-Rahman, D Parent, P Wojdylo, D A Thompson, and R R LaPierre, “Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon,” Nano Futures, 1 (3), 1 – 7, 2017.
9.R R LaPierre, M Robson, K M Azizur-Rahman, and P Kuyanov, “A review of III-V nanowire infrared photodetectors and sensors,” Journal of Physics D: Applied Physics, 50 (12), 1 – 10, 2017.
10.K M Azizur-Rahman and R R LaPierre, “Optical design of a mid-wavelength infrared InSb nanowire photodetector,” Nanotechnology, 27 (31), 1 – 8, 2016.
11.K M Azizur-Rahman and R R LaPierre, “Wavelength-selective absorptance in GaAs, InP, and InAs nanowire arrays,” Nanotechnology, 26 (29), 1 – 7, 2015. [Cover article]
12.A H Trojnar, C E Valdivia, K M Azizur-Rahman, R R LaPierre, K Hinzer, and J J Krich, “Optimization of GaAs nanowire solar cell efficiency via optoelectronic modeling,” IEEE 42nd PVSC, 1 – 6, 2015.
13.R R LaPierre, A C E Chia, S J Gibson, C M Haapamaki, J Boulanger, R Yee, P Kuyanov, J Zhang, N Tajik, N Jewell, and K M A Rahman, “III–V nanowire photovoltaics: Review of design for high efficiency,” Phys. Status Solidi – Rapid Res. Lett., 7 (10), 815 – 830, 2013. [Cover article]
Publications
2022
- Chang, T. et al. 2022. InAsP quantum dot-embedded InP nanowires toward silicon photonic applications. ACS Applied Materials and Interfaces 14(10), pp. 12488–12494. (10.1021/acsami.1c21013)
2020
- Ji, Y. et al. 2020. Optimization of surface passivation for suppressing leakage current in GaSb PIN devices. Electronics Letters 56(25), pp. 1420-1423. (10.1049/el.2020.2063)
2019
- Ren, D. et al. 2019. Room-temperature midwavelength infrared InAsSb nanowire photodetector arrays with Al2O3 passivation. Nano Letters 19(5), pp. 2793-2802. (10.1021/acs.nanolett.8b04420)
- Farrell, A. C. et al. 2019. InGaAs-GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode. Nano Letters 19(1), pp. 582-590. (10.1021/acs.nanolett.8b04643)
- Huynh, S. H., Kim, H., Gong, Y., Azizur-Rahman, K., Li, Q. and Huffaker, D. 2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.
2018
- Ren, D. et al. 2018. Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions. Nano Letters 18(12), pp. 7901-7908. (10.1021/acs.nanolett.8b03775)
- Ren, D., Rong, Z., Azizur-Rahman, K. M., Somasundaram, S., Shahili, M. and Huffaker, D. L. 2018. Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions. Nanotechnology 30, article number: 44002. (10.1088/1361-6528/aaed5c)
- Ren, D., Rong, Z., Somasundaram, S., Azizur-Rahman, K. M., Liang, B. and Huffaker, D. L. 2018. A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires. Nanotechnology 29(50), article number: 504003. (10.1088/1361-6528/aae365)
Project Implementation Summary:
The project was implemented through 5 different experimental and simulation work packages (WPs). In:
The dissemination of the project will continue even after the official end date with scientific papers in various stages of preparation to be published soon.
Progress beyond the state of the art:
We pushed the state of the art in bottom-up and top-down nanopillar device fabrication. We investigated ex-situ nanopillar passivation and surface passivation model. We also investigated ensemble p-n GaAs nanopillar devices. We have also paved the foundation for top-down etched InGaAsP/InP nanopillar devices. These results will no doubt open new areas of investigation into III-V nanopillar devices.
