Epitaxial layer optimisation
Mae'r cynnwys hwn ar gael yn Saesneg yn unig.
We are establishing a systematic approach for epitaxial layer optimisation for gallium nitride (GaN) high frequency (HF) electronic devices.
Optimisation will be achieved by exploiting the direct link between epitaxial growth design and radio frequency (RF) device performance in systems identified via RF Waveform Engineering.
Our systematic approach will provide IQE with a knowledge base linking RF performance and epitaxial layer design and growth, ideally a design tool-box, thus improving IQE’s ability to confidently supply material to the customer knowing that it will perform according to the specification and application requirements.
The project will add a new Research and Development dimension to IQE as an industrial partner, and enable IQE to address future issues in advance of customer demand.
There are four partners involved in this project:
- Cardiff University
- IQE plc
- The University of Bristol
- Swansea University
This three-year industrial fellowship is funded by the National Research Network (NRNC19), from September 2015 until August 2018 inclusive.
Contact
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